The most promising method for producing pure large-area graphene is the chemical vapor deposition method (CVD method). This method is based on the decomposition of a carbon-containing gas (for example, methane) at high temperature (from 800 to 1050 C) near a catalytic substrate (for example, copper or nickel). It should be noted that the mechanisms for the formation of graphene on copper and nickel differ from each other.
The formation of graphene on nickel occurs in several stages:
The formation of graphene on copper is much simpler:
To implement this method, several plants have been developed with the ability to control all synthesis parameters. At these plants, the synthesis conditions were selected for both single-layer graphene on copper and graphene film with a given number of layers on nickel.
We adapted one of our plants for the synthesis of graphene for laboratory use and put up for sale. All information about the installation can be found on the page: Equipment for graphene synthesis and in the Products section.
Our scientific articles on the synthesis of graphene:
 Control of number of graphene layers grown by chemical vapor deposition, 2010, journal Physica Status Solidi (c)
 Chemical Vapor Deposition of Graphene on Copper Foils, 2013, journal Journal of Nanoelectronics and Optoelectronics
 Chemical Vapor Deposition of Graphene on Nickel from Different Gaseous Atmospheres, 2013, journal Journal of Nanoelectronics and Optoelectronics
 Efficient nitrogen doping of graphene by plasma treatment, 2016, journal Carbon
 In Situ Control of CVD Synthesis of Graphene Film on Nickel Foil, 2017, journal Physica Status Solidi (b)
 Modification of graphene electronic properties via controllable gas-phase doping with copper chloride, 2018, journal Applied Physics Letters
 Crystallization of Thin Copper Films on Silica Substrate for Graphene Growth, 2019, journal Physica Status Solidi (b)
 Controlled Graphene Synthesis from Solid Carbon Sources, 2019, journal Physica Status Solidi (b)